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Ultrafast Physical Processes in Semiconductors 1st Edition by Tsen ISBN ‎ 012390787X 978-0123907875

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Ultrafast Physical Processes in Semiconductors 1st Edition K.T. Tsen (Eds.) Digital Instant Download

Author(s): K.T. Tsen (Eds.)
ISBN(s): 9780127521763, 0127521763
Edition: 1
File Details: PDF, 4.91 MB
Year: 2001
Language: english
SKU: EB-1799484 Category: Tag:

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Product details: 

ISBN 10: 012390787X 

ISBN 13: 978-0123907875

Author:  K.T. Tsen

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series’ tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.
 

Table of contents: 

Chapter 1 Ultrafast Electron-Phonon Interactions in Semiconductors: Quantum Kinetic Memory Effects.

Alfred Leitenstorfer and Alfred Laubereau

I. INTRODUCTION

II. GENERAL CONSIDERATIONS

1. Choice of Interaction Process and Material Systems

2. Ultrafast Generation of Nonequilibrium Charge Carriers

III. EXPERIMENTAL TECHNIQUE

1. The Two-Color Femtosecond Ti: Sapphire Laser Oscillator

2. Ultrasensitive Pump-Probe Spectroscopy at the Shot-Noise Limit

3. Optimum Conditions to Observe Electron-Phonon Dynamics.

IV. RESULTS AND DISCUSSION

1. The Weakly Coupled Case: GaAs

2. Intermediate Coupling Regime: CdTe.

V. CONCLUSION

REFERENCES

Chapter 2 Spatially and Temporally Resolved Near-Field Scanning Optical Microscopy Studies of Semiconductor Quantum Wires

Christoph Lienau and Thomas Elsaesser

I. INTRODUCTION

II. SEMICONDUCTOR NANOSTRUCTURES

1. General Aspects

2. Semiconductor Quantum Wires.

III. NEAR-FIELD SCANNING OPTICAL MICROSCOPY

1. Introduction

2. Near-Field Optics

3. Theoretical Description of Near-Field Optics of Semiconductor Nanostructures

4. Near-Field Probes

5. Probe-to-Sample Distance Control

6. Low-Temperature Near-Field Microscopy

7. Temporally and Spatially Resolved Near-Field Spectroscopy

IV. STATIONARY NEAR-FIELD SPECTROSCOPY OF SEMICONDUCTOR

NANOSTRUCTURES

1. Low-Temperature Near-Field Spectroscopy

2. Near-Field Spectroscopy of Quantum Wires on Patterned (311) A GaAs Surfaces

V. TIME-RESOLVED NEAR-FIELD SPECTROSCOPY

1. Lateral Carrier Transport Studied by Picosecond Near-Field Luminescence Spectroscopy

2. Femtosecond Near-Field Pump-and-Probe Spectroscopy

VI. OUTLOOK AND CONCLUSIONS.

REFERENCES.

Chapter 3 Ultrafast Dynamics in Wide Bandgap Wurtzite GaN

K. T. Tsen

I. INTRODUCTION

II. RAMAN SPECTROSCOPY IN SEMICONDUCTORS

1. Theory of Raman Scattering from Carriers in Semiconductors.

2. Theory of Raman Scattering by Lattice Vibrations in Semiconductors

III. SAMPLES, EXPERIMENTAL SETUP, AND APPROACH

IV. PHONON MODES IN THE WURTZITE STRUCTURE GAN.

V. EXPERIMENTAL RESULTS

1. Studies of Electron-Phonon Interactions in Wurtzite GaN by Nonlinear

Laser Excitation Processes

2. Nonequilibrium Electron Distributions and Electron-Longitudinal Optical Phonon Scattering Rates in Wurtzite GaN Studied by an Ultrashort, Ultraviolet Laser

3. Anharmonic Decay of the Longitudinal Optical Phonons in Wurtzite GaN Studied by Subpicosecond Time-Resolved Raman Spectroscopy

VI. CONCLUSIONS AND FUTURE EXPERIMENTS

REFERENCES.

Chapter 4 Ultrafast Dynamics and Phase Changes in Highly Excited GaAs

J. Paul Callan, Albert M.-T. Kim, Christopher A. D. Roeser, and Eric Mazur

1. INTRODUCTION

11. MEASURING ULTRAFAST PHENOMENA WITH LIGHT

1. Ultrafast Measurements: The Pump-Probe Technique

2. Linear Optical Properties and the Dielectric Function

3. Microscopic Theory of the Dielectric Function

4. The Dielectric Function of Crystalline Solids: Interband Contributions

5. The Dielectric Function of Crystalline Solids: Intraband Contributions

6. Lattice Structure Effects on the Dielectric Function

7. Electronic Configuration Effects on the Dielectric Function

8. Why We Measure the Dielectric Function

III. DYNAMICS OF ELECTRONS AND ATOMS FROM FEMTOSECONDS TO MICROSECONDS

1. Mechanisms of Carrier Excitation

2. Carrier Redistribution, Thermalization, and Cooling

3. Carrier-Lattice Thermalization

4. Carrier Recombination

5. Carrier Diffusion

6. Structural Effects

7. Summary

IV. MEASURING THE TIME-RESOLVED DIELECTRIC FUNCTION

1. White-Light Probe Generation

2. Measuring Transient Reflectivity Spectra

3. Extracting the Transient Dielectric Function

V. TIME-RESOLVED DIELECTRIC FUNCTION OF HIGHLY EXCITED GaAs

1. Low Fluence Regime (F < 0.5 kJ/m²)

2. Medium Fluence Regime (F = 0.5-0.8 kJ/m²).

3. High Fluence Regime (F > 0.8 kJ/m²)

VI. CARRIER AND LATTICE DYNAMICS.

1. Carrier Dynamics: Excitation, Scattering, and Relaxation

2. Structural Dynamics: Lattice Heating, Disordering, and Phase Transitions

VII. CONCLUSIONS

REFERENCES

Chapter 5 Quantum Kinetics for Femtosecond Spectroscopy in Semiconductors.

Hartmut Haug

1. INTRODUCTION

II. SEMICONDUCTOR BLOCH EQUATIONS FOR PULSE EXCITATION WITH QUANTUM

KINETIC SCATTERING INTEGRALS

III. Low-EXCITATION FEMTOSECOND SPECTROSCOPY

1. Femtosecond FWM with LO-Phonon Quantum Kinetic Scattering

2. Femtosecond DTS with LO-Phonon Quantum Kinetic Scattering

IV. FEMTOSECOND DTS FOR SCREENED COULOMB AND LO-PHONON QUANTUM

KINETIC SCATTERING

V. RESONANT FWM WITH SCREENED COULOMB AND LO-PHONON QUANTUM KINETIC SCATTERING

REFERENCES

Chapter 6 Coulomb Correlation Signatures in the Excitonic Optical Nonlinearities of Semiconductors

T. Meier and S. W. Koch

1. INTRODUCTION

11. THEORETICAL APPROACH AND MODEL

1. The Coherent (3) Limit.

2. Nonlinear Optical Signals.

3. One-Dimensional Model System

111. APPLICATIONS TO PUMP-PROBE SPECTROSCOPY

1. Resonant Absorption Changes for Low Intensities.

2. Off-Resonant Absorption Changes for Low Intensities

3. Higher Intensities up to the Coherent (5) Limit.

IV. ABSORPTION CHANGES INDUCED BY INCOHERENT OCCUPATIONS

V. APPLICATIONS TO FOUR-WAVE-MIXING SPECTROSCOPY

1. Biexcitonic Beats

2. Disorder-Induced Dephasing

VI. SUMMARY

VII. OUTLOOK

Chapter 7 Electronic and Structural Response of Materials to Fast, Intense Laser Pulses.

Roland E. Allen, Traian Dumitrică, and Ben Torralva

1. INTRODUCTION

II. TIGHT-BINDING ELECTRON-ION DYNAMICS

III. ∈(0) AND (2) AS SIGNATURES OF A NONTHERMAL PHASE TRANSITION

IV. DETAILED INFORMATION FROM MICROSCOPIC SIMULATIONS

1. A Simple Picture

2. Excited-State Tight-Binding Molecular Dynamics.

3. Detailed Model

4. Electronic Excitation and Time-Dependent Band Structure

5. Dielectric Function as a Signature of the Change in Bonding

6. Second-Order Susceptibility as a Signature of the Change in Symmetry

7. Summary of Results for GaAs

V. FORMULA FOR THE SECOND-ORDER SUSCEPTIBILITY (2)

1. Tight-Binding Hamiltonian in an Electromagnetic Field

2. Second-Order Susceptibility in a Tight-Binding Representation

3. Formula for the Dielectric Function

4. Calculation of x2(o) for GaAs

VI. RESPONSE OF SI TO FAST, INTENSE PULSES

VII. DENSITY FUNCTIONAL SIMULATION FOR SI

VIII. RESPONSE OF C60 TO ULTRAFAST PULSES OF LOW, HIGH, AND VERY HIGH

INTENSITY.

IX. THE SIMPLEST SYSTEM, H

X. BIOLOGICAL MOLECULES

XI. CONCLUSION

REFERENCES.

Chapter 8 Coherent THz Emission in Semiconductors

E. Gornik and R. Kersting

1. INTRODUCTION

11. PRINCIPLES OF PULSED THZ EMISSION AND DETECTION

1. Dipole Emission

2. Temporal and Spatial Coherence

3. Detection of THz Pulses

111. MACROSCOPIC CURRENTS AND POLARIZATIONS

1. Drude-Lorentz Model of Carrier Transport

2. The Instantaneous Polarization

3. Phases of Transport and Polarization

4. Emission from Field-Induced Transport

5. Bandwidth Increase by Ultrafast Currents

6. Emission from an Instantaneous Polarization

IV. COHERENT CHARGE OSCILLATIONS

1. Plasma Oscillations of Photoexcited Carriers

2. Plasma Oscillations of Extrinsic Carriers

3. Plasma Oscillations in 2D Layers

4. Coherent Phonons and Plasmon-Phonon Coupling

V. THZ EMISSION FROM QUANTUM STRUCTURES

1. Quantum Beats

2. Bloch Oscillations

3. Intersubband Transitions

VI. APPLICATIONS IN SEMICONDUCTOR SPECTROSCOPY

1. Optical Pump-TH: Probe Spectroscopy

2. THz Time-Domain Spectroscopy

VII. CONCLUSIONS

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